1/9 target data september 2003 stp9nk60zfd - STF9NK60ZFD stb9nk60zfd n-channel 600v - 0.85 w - 7a to-220/to-220fp/d 2 pak fast diode supermesh? mosfet n typical r ds (on) = 0.85 w n high dv/dt capability n 100% avalanche tested n gate charge minimized n low intrinsic capacitances n very good manufacturing repeatibility n fast internal recovery diode description the fast supermesh? series associates all ad- vantages of reduced on-resistance, zener gate pro- tection and very goog dv/dt capability with a fast body-drain recovery diode. such series comple- ments the fdmesh? advanced technology. applications n hid ballast n zvs phase-shift full bridge converters ordering information type v dss r ds(on) i d pw stp9nk60zfd STF9NK60ZFD stb9nk60zfd 600 v 600 v 600 v < 0.95 w < 0.95 w < 0.95 w 7a 7a 7a 104 w 32 w 104 w sales type marking package packaging stp9nk60zfd p9nk60zfd to-220 tube STF9NK60ZFD f9nk60zfd to-220fp tube stb9nk60zfdt4 b9nk60zfd d 2 pa k tape & reel to-220 to-220fp 1 2 3 1 3 d 2 pak internal schematic diagram
stp9nk60zfd - STF9NK60ZFD - stb9nk60zfd 2/9 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 7a, di/dt 200a/s, v dd v (br)dss ,t j t jmax. (*) limited only by maximum temperature allowed thermal data avalanche characteristics gate-source zener diode protection features of gate-to-source zener diodes the built-in back-to-back zener diodes have specifically been designed to enhance not only the devices esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. in this respect the zener voltage is appropriate to achieve an efficient and cost- effective intervention to protect the devices integrity. these integrated zener diodes thus avoid the usage of external components. symbol parameter value unit to-220 / d 2 pak to-220fp v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w )600v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 7 7 (*) a i d drain current (continuos) at t c = 100c 4.3 4.3 (*) a i dm ( ) drain current (pulsed) 28 28 (*) a p tot total dissipation at t c = 25c 104 32 w derating factor 0.83 0.26 w/c v esd(g-s) gate source esd (hbm-c=100pf, r=1.5k w) 4000 v dv/dt (1) peak diode recovery voltage slope tbd v/ns v iso insulation withstand voltage (dc) - 2500 v t j t stg operating junction temperature storage temperature -55 to 150 c to-220 d 2 pak to-220fp unit rthj-case thermal resistance junction-case max 1.02 3.85 c/w rthj-pcb thermal resistance junction-pcb max (when mounted on minimum footprint) 30 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 7a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 280 mj symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1ma (open drain) 30 v
3/9 stp9nk60zfd - STF9NK60ZFD - stb9nk60zfd electrical characteristics (tcase =25c unless otherwise specified) on/off dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. 3. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating, t c = 125 c 1 50 a a i gss gate-body leakage current (v ds =0) v gs = 20v 10 a v gs(th) gate threshold voltage v ds =v gs ,i d = 100a 3 3.75 4.5 v r ds(on) static drain-source on resistance v gs =10v,i d = 3.5 a 0.85 0.95 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v , i d = 3.5 a 5.3 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v,f=1mhz,v gs =0 1110 135 30 pf pf pf c oss eq. (3) equivalent output capacitance v gs =0v,v ds = 0v to 480v 72 pf symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =300v,i d = 3.5 a r g = 4.7 w v gs =10v (resistive load see, figure 3) 19 17 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =480v,i d =7a, v gs =10v 38 7 21 53 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 300 v, i d = 3.5 a r g =4.7 w v gs =10v (resistive load see, figure 3) 43 15 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 480v, i d =7a, r g =4.7 w, v gs = 10v (inductive load see, figure 5) 11 8 20 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (2) source-drain current source-drain current (pulsed) 7 28 a a v sd (1) forward on voltage i sd = 7 a, v gs =0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 7 a, di/dt = 100a/s v dd =30v,t j = 150c (see test circuit, figure 5) 150 tbd tbd ns c a
stp9nk60zfd - STF9NK60ZFD - stb9nk60zfd 4/9 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
5/9 stp9nk60zfd - STF9NK60ZFD - stb9nk60zfd dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stp9nk60zfd - STF9NK60ZFD - stb9nk60zfd 6/9 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
7/9 stp9nk60zfd - STF9NK60ZFD - stb9nk60zfd 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0o 8o d 2 pak mechanical data 3
stp9nk60zfd - STF9NK60ZFD - stb9nk60zfd 8/9 tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
9/9 stp9nk60zfd - STF9NK60ZFD - stb9nk60zfd information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com
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